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Nikan wafer epi graphite susceptor
| Ibi ti Oti: | China |
| Brand Name: | Semixlab |
| Awoṣe Number: | SWEGS0001 |
| iwe eri: | ISO9001 |
| Kere Bere fun opoiye: | 1pc |
| Iye: | adani |
| Apoti alaye: | Standard okeere apoti |
| Akoko Ifijiṣẹ: | 30-45days |
| Owo ofin: | Lati wa ni adehun iṣowo |
| Ipese Agbara: | 300pcs fun osu |
Apejuwe
ASM monolithic epitaxial tray jẹ apẹrẹ fun iṣẹ-giga ohun alumọni carbide (SiC), gallium nitride (GaN) ati awọn miiran iran kẹta semikondokito epitaxial ilana, awọn ọja pẹlu kan ti ṣeto ti lẹẹdi atẹ, lẹẹdi oruka ati awọn ẹya ẹrọ miiran, lilo ga ti nw graphite sobusitireti + vapor deposition silikoni carbide ti a bo ipilẹ iduroṣinṣin, ni iṣiro aaye ti o ga. O jẹ paati gbigbe mojuto ti iwe epitaxial pipe-giga ni iṣelọpọ ọpọ.
Awọn alaye apejuwe:
1. Miiran awọn orukọ: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, nikan wafer susceptor.
2. Ohun elo: Fun iṣẹ-giga silikoni carbide (SiC), gallium nitride (GaN) ati awọn miiran iran kẹta semikondokito epitaxial ilana.
ni pato
| Awọn ohun-ini ipilẹ ti ara ti CVD SiC bo | |
| ohun ini | Aṣoju Iye |
| Crystal Be | FCC β polycrystalline alakoso, nipataki (111) Oorun |
| iwuwo | 3.21 g / cm³ |
| líle | 2500 Vickers lile (ẹrù 500g) |
| Iwọn ọkà | 2 ~ 10μm |
| Kemikali Ti nw | 99.99995% |
| Agbara Agbara | 640 · kg-1·K-1 |
| Sublimation otutu | 2700 ℃ |
| Agbara Ọpọlọ | 415 MPa RT 4-ojuami |
| Ọmọde Modulus | 430 Gpa 4pt tẹ, 1300 ℃ |
| Iwa Gbona | 300W·m-1·K-1 |
| Imugboroosi Gbona (CTE) | 4.5 × 10-6K-1 |
Mojuto Awọn iṣẹ ati Design Ifojusi
Imudara ohun elo: graphite + SiC bo
Aworan
-Ultra-high thermal conductivity (> 130 W / m · K), idahun ni kiakia si awọn ibeere iṣakoso iwọn otutu, lati rii daju pe ilana ilana.
-Iwọn imugboroja igbona kekere (CTE: 4.6 × 10⁻⁶ / ° C), dinku ibajẹ iwọn otutu giga, igbesi aye iṣẹ gigun.
| Awọn ohun-ini ti ara ti graphite isostatic | ||
| ohun ini | Unit | Aṣoju Iye |
| Iwuwo Pupọ | g / cm³ | 1.83 |
| líle | HSD | 58 |
| Gbigba agbara Itanna | μΩ.m | 10 |
| Agbara Ọpọlọ | MPA | 47 |
| Agbara Igbaradi | MPA | 103 |
| Agbara Ijapa | MPA | 31 |
| Modulu ọdọ | GPA | 11.8 |
| Imugboroosi Gbona (CTE) | 10-6K-1 | 4.6 |
| Iwa Gbona | W·m-1·K-1 | 130 |
| Apapọ Ọkà Iwon | μm | 8-10 |
CVD SiC ti a bo
-Ibajẹ resistance. Kolu ikọlu nipasẹ awọn gaasi aati bi H₂, HCl, ati SiH₄. O yago fun idoti ti Layer epitaxial nipasẹ iyipada ti ohun elo ipilẹ.
-Densification dada: porosity ti a bo jẹ kere ju 0.1%, eyi ti idilọwọ awọn olubasọrọ laarin lẹẹdi ati wafer ati idilọwọ awọn itankale erogba impurities.
Ifarada iwọn otutu giga: iṣẹ iduroṣinṣin igba pipẹ ni agbegbe loke 1600 ° C, ni ibamu si ibeere iwọn otutu giga ti SiC epitaxy.
| Awọn ohun-ini ipilẹ ti ara ti CVD SiC bo | |
| ohun ini | Aṣoju Iye |
| Crystal Be | FCC β polycrystalline alakoso, nipataki (111) Oorun |
| iwuwo | 3.21 g / cm³ |
| líle | 2500 Vickers lile (ẹrù 500g) |
| Iwọn ọkà | 2 ~ 10μm |
| Kemikali Ti nw | 99.99995% |
| Agbara Agbara | 640 J·kg-1·K-1 |
| Sublimation otutu | 2700 ℃ |
| Agbara Ọpọlọ | 415 MPa RT 4-ojuami |
| Ọmọde Modulus | 430 Gpa 4pt tẹ, 1300 ℃ |
| Iwa Gbona | 300W·m-1·K-1 |
| Imugboroosi Gbona (CTE) | 4.5 × 10-6K-1 |
Aaye igbona ati apẹrẹ iṣapeye afẹfẹ
Aso gbona Ìtọjú be
Awọn dada susceptor ti a ṣe pẹlu ọpọ awọn grooves itoni gbona, ati awọn ASM ẹrọ ká gbona aaye iṣakoso eto se aseyori otutu uniformity laarin ± 1.5 ° C (6-inch wafer, 8-inch wafer), aridaju aitasera ati uniformity ti epitaxial Layer sisanra (iyipada <3%).
Ilana idari afẹfẹ
Awọn ihò ipadasẹhin eti ati awọn ọwọn atilẹyin ti idagẹrẹ jẹ apẹrẹ lati mu ilọsiwaju pinpin ṣiṣan laminar ti gaasi ifaseyin lori dada wafer, dinku iyatọ ninu oṣuwọn ifisilẹ ti o ṣẹlẹ nipasẹ awọn ṣiṣan eddy, ati ilọsiwaju isokan doping.
Ibamu ati igbẹkẹle
Olona-si nmu aṣamubadọgba
Ni ibamu pẹlu 4H-SiC, 6H-SiC homoepitaxy, ati GaN-on-SiC heteroepitaxy ilana, atilẹyin N / P iru doping (gẹgẹbi N₂, Al doping).
Itọju igbesi aye gigun
Lile ti ohun alumọni carbide bo Gigun 430 Gpa 4pt tẹ, 1300 ℃, awọn resistance si patiku ogbara ti wa ni pọ nipa diẹ ẹ sii ju 3 igba, awọn iṣẹ aye ti a nikan atẹ koja 5000 ilana wakati, ati awọn iye owo ti okeerẹ consumables ti wa ni dinku.
Awọn iwoye Ohun elo
Ẹrọ agbara SiC-ọkọ ayọkẹlẹ
5G RF iwaju-opin module
Photovoltaic ati awọn ọna ipamọ agbara
Imọ ni pato Akopọ
| ohun | Specification |
| Awọn ohun elo mimọ | lẹẹdi mimọ giga ti isostatic (mimọ> 99.9995%) |
| Imọ-ẹrọ ibora | Iṣagbejade orule kemikali (CVD) ti ohun alumọni carbide |
| Wafer iwọn | 4/6/8 inch (ṣe asefara) |
| O pọju ṣiṣẹ otutu | 1650°C (Ayika gaasi inert) |
| Iṣọkan iwọn otutu | ≤±1.5°C (wafer 6-inch, ilana ipo iduro) |
| Ti a bo sisanra | 50-500 μm (Atunṣe, ± 10 μm deede) |
ifigagbaga Anfani
Aitasera ilana: Nipasẹ apẹrẹ ibaramu atilẹba ti ohun elo ASM, akoko atunṣe ti aaye igbona ati ṣiṣan afẹfẹ ti dinku.
Ifaramo idoti odo: Awọn ibora SiC kọja iwari aimọ irin boṣewa SEMI (Fe, Ni, ati bẹbẹ lọ <1ppb).
Itọju idahun ni iyara: Eto atẹ apọju, atilẹyin fun rirọpo ori ayelujara ati atilẹyin imọ-ẹrọ.