Silikoni Carbide ileru tube

Semixlab n pese eto tube tube SiC ileru mimọ Ultra-giga, awọn solusan aaye igbona ipele semikondokito pẹlu mimọ ti a bo 99.9999% ati ifijiṣẹ laini pipe.

Mojuto iye idalaba

Pese agbegbe igbona idoti odo-idoti fun iṣelọpọ wafer: 99.9% mimọ SiC ti sobusitireti + 99.9999% mimọ ti ibora CVD, ni idapo pẹlu pipe paddle SiC cantilever & eto ọkọ oju omi wafer, lati ṣaṣeyọri idoti irin odo ni iyẹwu ilana.

Awọn orukọ oriṣiriṣi fun awọn ọja:

Iwọn otutu SiC ileru tube; tube silikoni carbide; Iwa mimọ SiC tube; Silicon carbide tube fun ileru tan kaakiri; Silicon carbide tube fun itankale & ilana LPCVD; SiC tube fun RTP, tube SiC fun oxidation

Awọn pato pataki:

Iwa mimọ ohun elo: Ohun elo ipilẹ jẹ ohun alumọni carbide pẹlu mimọ ti o ju 99.9%, ati mimọ lẹhin ibora CVD ti kọja 99.9999% (grade 6N).

Išẹ igbona: Iwọn iṣẹ ṣiṣe ti o pọju 1650 ℃ (igba pipẹ), olùsọdipúpọ ti imugboroosi gbona: 4.6 × 10⁻⁶ / ℃, isodipupo ni agbegbe iwọn otutu igbagbogbo: ± 1.5 ℃ (1200 ℃);

Agbara ẹrọ: Agbara atunse 450Mpa (ni iwọn otutu yara).

Awọn lilo akọkọ

Gbona aaye ti ngbe

Ṣeto aaye iduroṣinṣin ati aṣọ ile laarin iwọn 1200 ℃ si 1650 ℃ (iyatọ iwọn otutu ni agbegbe iwọn otutu igbagbogbo jẹ ≤ ± 1.5 ℃)

Rii daju awọn ipo thermodynamic ti awọn ilana bii itankale, ifoyina ati annealing.

Idina ipinya idoti

Dina itankale awọn ions irin (gẹgẹbi Fe/Ni/Cu, ati bẹbẹ lọ) nipasẹ awọn ohun elo mimọ-giga (gẹgẹbi SiC).

Dena agbelebu-kontaminesonu laarin awọn gaasi ilana ati agbegbe ita.

Ilana gaasi ikanni

Ṣakoso itọsọna sisan ni deede ati pinpin awọn gaasi esi (bii O₂/N₂/SiH₄, ati bẹbẹ lọ)

Ṣe aṣeyọri awọn aati gaasi-ipele aṣọ lori ilẹ wafer (bii idagbasoke SiO₂).

Photovoltaic bo: Atilẹyin TOPCon/HJT cell PECVD ilana wafer irinna.

Awọn oju iṣẹlẹ elo

● Apọju

● Oxidation / Itankale

● Ilana LPCVD / PECVD

● Annealing ti III-V agbo semikondokito

Awọn ojutu si awọn aaye irora ile-iṣẹ

Awọn ojutu wa koju awọn aaye irora ti awọn alabara wa:

1. Awọn ilana ilana iwọn otutu ti o ga julọ kontaminesonu: 6N ti a bo ni awọn bulọọki ojoriro aimọ.

Rirọpo loorekoore ti SiC ni awọn paati quartz mu resistance ipata pọ si nipasẹ awọn akoko 8.

2. Apẹrẹ aitasera CTE fun aiṣedeede imugboroja igbona ti awọn paati aaye gbona ni gbogbo jara ti awọn ohun elo SiC.

3. Ultra-didan dada itọju ti irin kontaminesonu lori pada ti wafer (Ra 0.2μm).

Awọn anfani pataki ti awọn pato imọ-ẹrọ paati:

1. SiC ileru tube - Mimọ ohun elo mimọ: 99.9% sintered silicon carbide

▶ Iduroṣinṣin mọnamọna gbona jẹ imudara nipasẹ awọn akoko 3 (itutu agbaiye iyara> 1600℃)

Olusọdipúpọ ti imugboroja igbona jẹ kekere bi 4.6 × 10⁻⁶/℃

Ibo Nanoscale - Ifilọlẹ CVD ti SiC mimọ-giga giga 6N (99.9999%)

▶ Dina itankale awọn irin bii Fe ati Ni

▶ Irun oju oju Ra <0.5μm

2. SiC wafer Boat - Ni ibamu pẹlu 12-inch wafers

- Olona-Layer fifuye-ara oniru

▶ 100% ibaramu gbona pẹlu awọn tubes ileru

Oṣuwọn idoti wafer kere ju 0.01 ppb

3. Cantilever paddle eto - isostatic lẹẹdi sobusitireti + SiC bo

- Aifọwọyi titete deede ± 0.1mm

▶ Igbesi aye resistance ti nrakò> 100,000 igba

Gbigbọn gbigbe jẹ kere ju 5μm

Awọn ifojusi imọ-ẹrọ idalọwọduro

The Purity Iyika

Eto aabo ipele meji

Ipele ipilẹ jẹ 99.9% SiC → lati kọ ilana agbara-giga kan

CVD-SiC-ipele 6N ni ipele ti iṣẹ-ṣiṣe n ṣe ifidi si ipele atomiki kan
idena

Iṣakoso aimọ: Na/K <0.1ppm, awọn irin eru <5ppb, pade awọn ibeere ti awọn ilana ni isalẹ 28nm

Eto amuṣiṣẹpọ anfani

● Aṣọkan aaye igbona: Apẹrẹ idapọ igbona mẹta ti tube ileru + wafer + paddle paddle, iyatọ iwọn otutu ni agbegbe iwọn otutu igbagbogbo (> 1200 ℃) jẹ ≤ ± 1.5℃

● Igbesi aye ilọpo meji: Gbogbo ojutu fa igbesi aye naa pọ nipasẹ 40% ni akawe si eto arabara, pẹlu MTBA ti o kọja awọn wakati 8,000